Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporationKUDRAWIEC, R; MISIEWICZ, J.Solid state communications. 2010, Vol 150, Num 3-4, pp 227-229, issn 0038-1098, 3 p.Article

Model of hopping excitons in GaInNAs: simulations of sharp lines in micro-photoluminescence spectra and their dependence on the excitation power and temperatureBARANOWSKI, M; LATKOWSKA, M; KUDRAWIEC, R et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 20, issn 0953-8984, 205804.1-205804.5Article

Optical properties of GaInNAs/GaAs quantum wells: character of optical transitions and carrier localisation effectKUDRAWIEC, R; MISIEWICZ, J; FISHER, M et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 364-367, issn 0031-8965, 4 p.Conference Paper

Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure : A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wellsKUDRAWIEC, R; MISIEWICZ, J.Applied surface science. 2006, Vol 253, Num 1, pp 80-84, issn 0169-4332, 5 p.Conference Paper

On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; DUMITRESCU, M et al.Journal of luminescence. 2013, Vol 141, pp 67-70, issn 0022-2313, 4 p.Article

On the deepness of contactless electroreflectance probing in semiconductor structuresMOTYKA, M; KUDRAWIEC, R; MISIEWICZ, J et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 354-363, issn 1862-6300, 10 p.Conference Paper

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiationPAVELESCU, E.-M; KUDRAWIEC, R; BALTATEANU, N et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025020.1-025020.4Article

Contactless electroreflectance of ZnO layers grown by atomic layer deposition at low temperatureKUDRAWIEC, R; MISIEWICZ, J; WACHNICKI, L et al.Semiconductor science and technology. 2011, Vol 26, Num 7, issn 0268-1242, 075012.1-075012.5Article

Contactless electroreflectance of GaInN/AlInN multi quantum wells : The issue of broadening of optical transitionsKUDRAWIEC, R; GLADYSIEWICZ, M; MOTYKA, M et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 392-395, issn 0959-8324, 4 p.Conference Paper

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wellsKUDRAWIEC, R; GLADYSIEWICZ, M; MISIEWICZ, J et al.Microelectronics journal. 2009, Vol 40, Num 4-5, pp 805-808, issn 0959-8324, 4 p.Conference Paper

Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafersMOTYKA, M; KUDRAWIEC, R; SEK, G et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1402-1407, issn 0268-1242, 6 p.Article

Optical and structural properties of sol-gel derived materials embedded in porous anodic aluminaGAPONENKO, N. V; MOLCHAN, I. S; PIRA, N. Li et al.Microelectronic engineering. 2005, Vol 81, Num 2-4, pp 255-261, issn 0167-9317, 7 p.Article

Luminescence from sol-gel-derived europium-doped films confined in mesoporous anodic aluminaMOLCHAN, I. S; GAPONENKO, N. V; KUDRAWIEC, R et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 1, pp H16-H20, issn 0013-4651Article

Optical properties of an In_0.22Ga_0.78Sb/GaSb single quantum wellKUDRAWIEC, R; BRYJA, L; SEK, G et al.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 399-406, issn 0232-1300, 8 p.Conference Paper

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiationBARANOWSKI, M; KUDRAWIEC, R; SYPEREK, M et al.Semiconductor science and technology. 2011, Vol 26, Num 4, issn 0268-1242, 045012.1-045012.5Article

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanismASHRAF, H; KUDRAWIEC, R; WEYHER, J. L et al.Journal of crystal growth. 2010, Vol 312, Num 16-17, pp 2398-2403, issn 0022-0248, 6 p.Article

Contactless electroreflectance study of band bending for undoped, Si-and Mg-doped GaN layers and AlGaN/GaN transistor heterostructuresKUDRAWIEC, R; MOTYKA, M; MISIEWICZ, J et al.Microelectronics journal. 2009, Vol 40, Num 2, pp 370-372, issn 0959-8324, 3 p.Conference Paper

Photomodulated transmittance of GaBiAs layers grown on (0 01) and (311)B GaAs substratesKUDRAWIEC, R; POLOCZEK, P; MOLINA, S. I et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 537-539, issn 0959-8324, 3 p.Conference Paper

Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium contentKUDRAWIEC, R; YUEN, H. B; BANK, S. R et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 364-372, issn 1862-6300, 9 p.Conference Paper

The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectanceKUDRAWIEC, R; YUEN, H. B; BANK, S. R et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 543-546, issn 1862-6300, 4 p.Conference Paper

Influence of the annealing temperature on the optical transitions of ingaasp-based quantum well structures investigated by photoreflectance spectroscopyPODHORODECKI, A; KUDRAWIEC, R; ANDRZEJEWSKI, J et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 7, pp 1263-1269, issn 0031-8965, 7 p.Conference Paper

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wellsMISIEWICZ, J; KUDRAWIEC, R; MOTYKA, M et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 446-449, issn 0959-8324, 4 p.Conference Paper

Study of neodymium photoluminescence and energy transfer in silicon-based gelsPIVIN, J. C; PODHORODECKI, A; KUDRAWIEC, R et al.Optical materials (Amsterdam). 2005, Vol 27, Num 9, pp 1467-1470, issn 0925-3467, 4 p.Conference Paper

Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structuresMISIEWICZ, J; SEK, G; KUDRAWIEC, R et al.Thin solid films. 2004, Vol 450, Num 1, pp 14-22, issn 0040-6090, 9 p.Conference Paper

Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compoundsKUDRAWIEC, R; SEK, G; MISIEWICZ, J et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 313-316, issn 1286-0042, 4 p.Conference Paper